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U2309B
VHF/ UHF-Tuner-IC
Description
This tuner IC requires a power supply of 9 V and performs the function of three separate oscillators an mixers, SAWF-driver, L.O.-output and tri-state band switch. Additional to TV-tuner application this IC is usable for DAB (Digital Audio Broadcast) tuners.
Features
D 9 V supply voltage D Frequency range from 48 to 860 MHz D Band A: balanced high impedance mixer input and
amplitude controlled oscillator
D Balanced L. O.-outputs for prescalers or PLL D SAW filter driver with low impedance output D Voltage regulator for stable operating characteristics D ESD protection on all pins except oscillator pins and
RF-inputs
D Band B + C: balanced low impedance mixer input and
symmetrical oscillator
Benefits
D The integration of 3 bands and the small SSO28
package allows to design very small and economical 3-band tuners with high performance.
Block Diagram
1 Osc. A 3 4 65 7 8 10 9 11 19 2
Osc. B
Osc. C Voltage stabiliser Band switch L.O. 12
27 28
Mixer output SAW-filter driver
17 18
14
RF Band A 25 24 23 Band B 22 26 21 Band C
95 10717
13
20
16 15
Figure 1. Block diagram
TELEFUNKEN Semiconductors Rev. A2, 29-May-96
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U2309B
Pin Description
Osc A, base GND (common) Osc A, coll. Osc B, base Osc B, coll. Osc B, coll. Osc B, base Osc C, base Osc C, coll. 1 2 3 4 5 6 7 8 9 28 L.O. out 27 L.O. out 26 GND (RF) 25 RF in, A 24 RF in, A 23 RF in, B 22 RF in, B 21 RF in, C Pin 1 2 3 4, 7 5, 6 8, 11 9, 10 12 13, 14 15, 16 17, 18 19 20, 21 22, 23 24, 25 26 27, 28 Symbol Osc A, base GND (common) Osc A, coll. Osc B, base Osc B, coll. Osc C, base Osc C, coll. Band sw. SAWF, out SAWF, inp. Mix out VS RF in, C RF in, B RF in, A GND (RF) L.O. out Function Oscillator band A, base Ground, common Oscillator band A, collector Oscillator band B, bases Oscillator band B, collectors Oscillator band C, bases Oscillator band C, collectors Tri-state band switch SAW filter driver outputs SAW filter driver inputs Mixer outputs, open collector Supply voltage Vs RF inputs, band C RF inputs, band B RF inputs, band A Ground, RF part L.O.-outputs
20 RF in, C 19 18 17 16 15
95 10886
Osc C, coll. 10 Osc C, base Band sw. SAWF, out SAWF, out 11 12 13 14
VS Mix out Mix out SAWF, inp. SAWF, inp.
Ordering Information
Extended Type Number U2309B-FLG3 U2309B-FSG3 Package SO28 SSO28 Remarks Taped and reeled Taped and reeled
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U2309B
Absolute Maximum Ratings
All voltages are referred to GND, Pin 2 Parameters Supply voltage RF inputs IF outputs Tri-state switch voltage Junction temperature Storage temperature Pin 19 Pin (20-25) Pin 17-18 Pin 12 Symbol VS Min. Typ. Max. 10.5 5.0 10.5 10.5 125 125 Unit V V V V C C
ViTRI Tj Tstg
-40
Operating Range
All voltages are referred to GND, Pin 2 Parameters Supply voltage Ambient temperature Test Conditions / Pins Pin 17-19 Symbol VS Tamb Min 8.1 -25 Typ 9 Max 9.9 75 Unit V C
Thermal Resistance
Parameters Junction ambient Package SO28 soldered to PCB Package SSO28 soldered to PCB (see layout page 5) Symbol RthJA Typ 70 128 Unit K/W
Electrical Characteristics
Test conditions (unless otherwise specified): Vs = 9 V. Tamb = 25 C. Reference point Pin 2 Parameters Test Conditions / Pins Supply voltage Pin 17-19 Supply current Pin 17-19 Band switch Voltage band A Pin 12 Voltage band B Pin 12 Voltage band C Pin 12 Switching current VSW = 5 V Pin 12 L. O .-output L. O. level each output RL = 50 Ohm Pin 27, 28 SAW filter driver fi = 36 MHz Input impedance Pin 15, 16 Output impedance Pin 13, 14 Voltage gain Pin 15, 16 13, 14 Symbol VS IS VSWA VSWB VSWC ISW PLO ZiSAW ZoSAW GvSAW Min 8.1 Typ 9.0 42 0 2.0 4.0 Max 9.9 50 1.0 2.4 5.0 100 -17 450 70 17 Unit V mA V V V
0 1.6 3.4
mA
dBm Ohm Ohm dB
-25
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U2309B
Electrical Characteristics (continued)
Parameters Band A Input frequency range Input impedance Gain (note 4) Noise figure DSB (note 2) Test Conditions / Pins Pin 24 Pin 24 Pin I/P to O/P Pin I/P to O/P fiA = 50 MHz fiA = 150 MHz Each carrier fiA = 71 MHz Pin I/P fiA = 71 MHz Pin I/P Figure 3 Pin 22, 23 Pin 22, 23 Pin I/P to O/P Pin I/P to O/P fiB = 200 MHz fiB = 450 MHz Each carrier fiB = 300 MHz Pin I/P Symbol fiA S11A GA NF NF ViA ViA fiA S11B GB NF NF ViB fiC S11C GC NF NF ViC 470 32 10.5 11.5 -28 170 see Fig. 3 32 9.5 10 -28 860 Min 48 28 11.5 12 -23 -22 470 Typ Max 170 Unit MHz dB dB dB dBm dBm MHz dB dB dB dBm MHz dB dB dB dBm
Input level for (note 3): IM3 (interm. of 3rd order IM2 (interm. of 2nd order) Band B (note 1) Input frequency range Input impedance Gain (note 4) Noise figure DSB (note 2)
Input level for (note 3): IM3 (interm. of 3rd order) Band C (note 1) Input frequency range Input impedance Gain Noise figure DSB (note 2)
Pin 20, 21 Pin 20, 21 Pin I/P to O/P Pin I/P to O/P fiC = 500 MHZ fiC = 800 MHz Input level for IM3 Each carrier (interm. of 3rd order, note 3) fiC = 600 MHz Pin I/P Figure 3 Notes
1) 2) 3) 4)
The RF inputs B and C are symmetrical driven by means of a hybrid for 180 phase shifting, consequently the source impedance is 100 W. All other impedance for RF tests is 50 W. The noise figure (NF) is the value for double-side-band measurement. The intermodulation test (2-carrier-method) which is made on IF-centre is in reference to a signal-to-IM ratio of 60 dB. Gain is the ratio of the voltage at the primary coil of L5 to the available voltage at the input.
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U2309B
Test and Principle Application Circuit
Band C UHF Band B VHFH Band A VHFL 1n 1n 1n 1n 1n 1n 1n 1n I/P 15p I/P 180 I/P
o
Hybrids 0 / 180 degree with 50 ohms Z(in) and 100 ohms (2x50) Z(out) VS L6 10n
180
o
L.O.
100p
IF : PC 38.9 MHz SC 33.4 MHz
100p L.O. 25 21 17 The output-voltage of the IF is calculated back to the primary coil of L5 13 1n 2p2 18 2p BB620 L1 1k 82p 18k 10n VT Figure 2. Test and principle application circuit 18k 8p2 BB515 18k
95 10718
U2309B
Air Coils 0.6 mm enamelled copper wire L1 L2 L3 L4 8 3 3 3 turns 3.0 mm dia. turns 2.5 mm dia. 1p turns 2.5 mm dia. turns 2.5 mm dia. 2p7 2p7 2p2 L2 68p BB619 1p 1p L3 2k2 1p 1 5 9
15p
L5 IF-Out O/P
1n 1p
TOKO-Coils L5 12+2 turns L6 6+6 turns
VSW 100p L4 18k 1n
PCB for the RthJA-Measurement
Material: 35 mm one-sided Cu-coated epoxy PCB, 40 mm 40 mm 1.5 mm
R(th) SO28 U2300B
95 10719
Figure 3. PCB for the RthJA-measurement
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U2309B
Input Impedance Mixer Band A (S11A), B and C (S11B/C)
j
0.5j
2j
0.2j
-0.2j
1
-0.5j
95 9928
-j
Figure 4. Input impedance mixer band A (S11A), B and C (S11B/C)
1)
VHF-low Normalised to 50 W, measuring range 45 MHz to 750 MHz. VHF-high and UHF Normalised to 50 W, measuring range 45 MHz to 1045 MHz. Both inputs are driven symmetrical. The output impedance of hybrid is 100 W,the measured levels are then calculated in reference to 50 W.
2)
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AAAA AAAA AAAA AAAAA AA AAA
0
0.2
45 MHz
0.5
1
2
750 MHz
Z0 = 50 W
-2j
TELEFUNKEN Semiconductors Rev. A2, 29-May-96
A A
A A
AA AAAAAA A AA AAAA A AAAAA AAAA AA AAAA AA AAAAA A
845 MHz
1045 MHz
2
645 MHz
5j
445 MHz
245 MHz
5
1
45 MHz
250 MHz
500 MHz -5j
U2309B
Dimensions in mm:
Package: SO28
95 9932
Package: SSO28
95 10721
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U2309B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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TELEFUNKEN Semiconductors Rev. A2, 29-May-96

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